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Si3457BDV
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.054 at V GS = - 10 V
0.100 at V GS = - 4.5 V
I D (A)
- 5.0
- 3.7
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
TSOP-6
Top View
1
6
(4) S
3 mm
2
3
5
4
(3) G
2.85 mm
(1, 2, 5, 6) D
Ordering Information: Si3457BDV-T1-E3 (Lead (Pb)-free)
Si3457BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
Marking Code:
7Bxxx
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 5.0
- 4.0
- 20
- 3.7
- 3.0
A
Continuous Source Current (Diode Conduction) a
I S
- 1.7
- 0.95
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
2.0
1.3
- 55 to 150
1.14
0.73
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
53
90
25
62.5
110
36
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72019
S09-0136-Rev. E, 02-Feb-09
www.vishay.com
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